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                EN

                M3i-低饱和压降型 IGBT 分立器件

                产品特性:

                采用Trench+Fieldstop技术;

                软开通特性,开通 di/dt 小,EMI 低;

                低饱和压降,导通损耗小;

                关断拖尾电流小,软关断特性;

                正温度系数,适合并联;

                高的短路▓电流能力(6us以上);

                开关速↘度快,开关损耗小;

                TVj max 达175℃;

                Type VCES
                (V)
                IC nom
                (A)
                VCE (sat)
                (V)
                Ptot
                (W)
                Eoff
                (mJ)
                RthJC
                (℃/W)
                Packages PDF资料
                MM15GT120B 1200 15 1.85 230 0.9 0.65 TO-247 预览     下载
                MM40G3T120B 1200 40 1.90 405 2.8 0.37 TO-247 预览     下载
                MM25G3T120B 1200 25 1.8 306 1.8 0.49 TO-247 预览     下载

                应用领域

                变频器

                伺服驱动器

                不间断电源

                光伏逆变器

                电动汽车